Surface barrier diode and method of making

ABSTRACT

A SURFACE BARRIER DIODE, COMMONLY REFERRED TO AS A SCHOTTKY BARRIER DIODE, HAVING A SEMICONDUCTOR BODY, A PROJECTING PORTION ON THE BODY, A LOW BARRIER METAL ON THE TOP SURFACE OF THE PROJECTING PORTION, A LAYER OF INSULATING MATERIAL OVER THE BODY, AND A TERMINAL MEANS IN ELECTRICAL CONTACT WITH THE LAYER OF LOW BARRIER METAL, AND A SECOND TERMINAL IN OHMIC CONTACT WITH THE SEMICONDUCTOR BODY. THE METHOD FOR FORMING THE DIODE INCLUDES THE STEP OF FORMING A PROJECTING PORTION ON A MONOCRYSTALLINE SEMICONDUCTOR BODY, DEPOSITING A LOW BARRIER METAL ON THE TOP SURFACE OF THE PROJECTING PORTION, AND ESTABLISHING CONTACT TERMINALS WITH THE LOW BARRIER METAL AND THE SEMICONDUCTOR BODY.

DEEENSWE PEMEA'HUN UNITED STATES PATENT OFFICE Published at the request of the applicant or owner in accordance with the Notice of Dec. 16, 1969, 869 O.G. 687. The abstracts of Defensive Publication applications are identified by distinctly numbered series and are arranged chronologically. The heading of each abstract indicates the number of pages of specification, including claims and sheets of drawings contained in the application as originally filed. The files of these applications are available to the public for inspection and reproduction may be purchased for 30 cents a sheet.

Defensive Publication applications have not been examined as to the merits of alleged invention. The Patent Oifice makes no assertion as to the novelty of the disclosed subject matter.

PUBLISHED JUNE 26, 1973 2a 30 40 2 .11 WE Z. I Q7 16 A surface barrier diode, commonly referred to as a Schottky barrier diode, having a semiconductor body, a projecting portion on the body, "a low barrier metal on the top surface of the projecting portion, a layer of insulating material over the body, and a terminal means in electrical contact With the layer of low barrier metal, and a second terminal in ohmic contact with the semiconductor body. The method for forming the diode includes the step of forming a projecting portion on a monocrystalline semiconductor body, depositing a low barrier metal on the top surface of the projecting portion, and establishing contact terminals with the low barrier metal and the semiconductor body.

N. G QANA N THA ETAL T911921 summer: manmn' u'xoum AND METHOD or MAKING. Y Y

ori ina Filed Aug. 20. 1969 STEPZ I 59 r I Inn/moles I NARASIPUR s. ANANTHA KANU G. ASHAR 

